Whether you are in the market for NSN parts, military and defense parts, aerospace parts, or other similar product solutions, Buy Military Fasteners is your one-stop shop with an expansive selection tracing back to premier manufacturers and entities that we trust. Thank you for taking an interest in part number 5962-8769001RA, a Dla Land And Maritime item that is listed alongside the description “Microcircuit Set” and the NSN 5962013630915. As part number 5962-8769001RA is ready for purchase on our website at any time, you are invited to fill out and submit the RFQ form provided on this page for the means of requesting a quote for your comparisons. All that we ask is that you supply us with crucial details such as your target price and expected shipping time frame, that way we can best customize a solution that caters to your unique requirements and constraints alike.
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As customers explore our vast selection, they can take advantage of services like our CAGE Code search features or database filters to quickly locate products of interest for purchase. For example, part number 5962-8769001RA is listed alongside the NSN 5962-01-363-0915, meaning that it also belongs to FSC 5962 Microcircuits Electronic. With this in mind, kick off procurement with us today with assurance that we can even fulfill your most difficult needs.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-363-0915 Item PartTypeName: MICROCIRCUIT SET | 5962 | 013630915 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
5962-8769001RA | 2 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
AFGA | OPERATING TEMP RANGE | -55.0/100.0 DEG CELSIUS 1ST MEMORY-55.0/125.0 DEG CELSIUS 2ND MEMORY |
ASDD | COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 1ST MEMORYD-8 MIL-M-38510 2ND MEMORY |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT DEVICES,EPROM/PROM |
CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC 1ST MEMORYBIPOLAR METAL-OXIDE SEMICONDUCTOR 2ND MEMORY |
CSSL | DESIGN FUNCTION AND QUANTITY | 2 PROM PROGRAM TABLE |
TTQY | TERMINAL TYPE AND QUANTITY | 24 CASE 1ST MEMORY20 CASE 2ND MEMORY |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CBBL | FEATURES PROVIDED | PROGRAMMED |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEM | MICROCIRCUIT DEVICE TYPE AND QUANTITY | 2 MEMORY |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM ABSOLUTE INPUT AND 7.0 VOLTS MAXIMUM ABSOLUTE INPUT |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS NOMINAL ACCESS 1ST MEMORY70.00 NANOSECONDS NOMINAL ACCESS 2ND MEMORY |
CZER | MEMORY DEVICE TYPE | EEPROM ERR-100 ERR-100ROM ERR-100 ERR-100 |
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